ISG2166

eq FGY100T120SWD

IGBT

www.iscsemi.com

2

STATIC CHARACTERISTICS（TJ = 25 °C unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYPE

MAX

UNIT

VCES

Collector-Emitter Breakdown Voltage VGE=0, IC= 5mA

1200

--

--

V

VGE(th)

Gate-Emitter Threshold Voltage

VGE= VCE, IC=100mA

5.6

--

7.4

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 100A, VCE= 15V

TJ = 25°C

--

--

2.0

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 100A, VCE= 15V

TJ = 175°C

--

2.26

--

V

ICES

Zero Gate Voltage Collector Current

VCE= 1200V, VGE=0V

--

--

40

uA

IGES

Gate-Emitter Leakage Current

VGE=±20V, VCE=0V

--

--

±

400

nA

VF

Forward Voltage

F = 100 A, TJ = 25°C

--

--

2.22

V

VF

Forward Voltage

F = 100 A, TJ = 175°C

--

1.87

--

V

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notification. The information contained herein is presented only as a guide for the applications of our

products.

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