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TPCF8301 Arkusz danych(PDF) 2 Page - Toshiba Semiconductor

Numer części TPCF8301
Szczegółowy opis  TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
PDF  7 Pages
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCF8301 Arkusz danych(HTML) 2 Page - Toshiba Semiconductor

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TPCF8301
2006-11-16
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Single-device operation
(Note 3a)
Rth (ch-a) (1)
92.6
Thermal resistance,
channel to ambient
(t
= 5 s)
(Note 2a) Single-device value at
dual operation (Note 3b)
Rth (ch-a) (2)
111.6
°C/W
Single-device operation
(Note 3a)
Rth (ch-a) (1)
235.8
Thermal resistance,
channel to ambient
(t
= 5 s)
(Note 2b) Single-device value at
dual operation (Note 3b)
Rth (ch-a) (2)
378.8
°C/W
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6): See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±8 V, VDS = 0 V
⎯
⎯
±10
μA
Drain cut-off current
IDSS
VDS = −20 V, VGS = 0 V
⎯
⎯
−10
μA
V (BR) DSS
ID = −10 mA, VGS = 0 V
−20
⎯
⎯
Drain-source breakdown voltage
V (BR) DSX
ID = −10 mA, VGS = 8 V
−12
⎯
⎯
V
Gate threshold voltage
Vth
VDS = −10 V, ID = −200 μA
−0.5
⎯
−1.2
V
RDS (ON)
VGS = −1.8 V, ID = −0.7 A
⎯
215
300
RDS (ON)
VGS = −2.5 V, ID = −1.4 A
⎯
110
160
Drain-source ON resistance
RDS (ON)
VGS = −4.5 V, ID = −1.4 A
⎯
72
110
m
Ω
Forward transfer admittance
|Yfs|
VDS = −10 V, ID = −1.4 A
2.4
4.7
⎯
S
Input capacitance
Ciss
⎯
470
⎯
Reverse transfer capacitance
Crss
⎯
70
⎯
Output capacitance
Coss
VDS = −10 V, VGS = 0 V, f = 1 MHz
⎯
80
⎯
pF
Rise time
tr
⎯
5
⎯
Turn-on time
ton
⎯
9
⎯
Fall time
tf
⎯
8
⎯
Switching time
Turn-off time
toff
Duty <= 1%, tw = 10 μs
⎯
26
⎯
ns
Total gate charge
(gate-source plus gate-drain)
Qg
⎯
6
⎯
Gate-source charge
Qgs
⎯
4
⎯
Gate-drain (“miller”) charge
Qgd
VDD ∼− −16 V, VGS = −5 V,
ID = −2.7 A
⎯
2
⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse (Note 1)
IDRP
⎯
⎯
⎯
−10.8
A
Forward voltage (diode)
VDSF
IDR = −2.7 A, VGS = 0 V
⎯
⎯
1.2
V
VDD ∼− −10 V
−5 V
VGS
0 V
ID = −1.4 A
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