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2SC2879A Arkusz danych(PDF) 2 Page - Toshiba Semiconductor

Numer części 2SC2879A
Szczegółowy opis  SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE)
PDF  4 Pages
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC2879A Arkusz danych(HTML) 2 Page - Toshiba Semiconductor

  2SC2879A Datasheet HTML 1Page - Toshiba Semiconductor 2SC2879A Datasheet HTML 2Page - Toshiba Semiconductor 2SC2879A Datasheet HTML 3Page - Toshiba Semiconductor 2SC2879A Datasheet HTML 4Page - Toshiba Semiconductor  
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2SC2879A
2007-11-01
2
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Emitter Breakdown Voltage
V (BR) CEO
IC = 100mA, IB = 0
18
—
—
V
Collector-Emitter Breakdown Voltage
V (BR) CES
IC = 100mA, VEB = 0
45
—
—
V
Emitter-Base Breakdown Voltage
V (BR) EBO
IE = 1mA, IC = 0
4
—
—
V
DC Current Gain
hFE
VCE = 5V, IC = 10A
10
—
150
Collector Output Capacitance
Cob
VCB = 12.5V, IE = 0
f = 1MHz
—
700
—
pF
Power Gain
Gp
13.0
15.2
—
dB
Input Power
Pi
—
6
10
WPEP
Collector Efficiency
ηC
35
—
—
%
Intermodulation Distortion
IMD
VCC = 12.5V, f1 = 28.000MHz
f2 = 28.001MHz
Iidle = 100mA
Po = 100WPEP.(Fig.)
—
—
−24
dB
Series Equivalent Input Impedance
Zin
—
1.45
−j0.95
—
Ω
Series Equivalent Output Impedance
Zout
VCC = 12.5V, f = 28MHz
Δf = 1kHz, Po = 100WPEP
—
1.45
−j1.0
—
Ω



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