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2SD2353 Arkusz danych(PDF) 2 Page - Toshiba Semiconductor

Numer części 2SD2353
Szczegółowy opis  Silicon NPN Triple Diffused Type
PDF  5 Pages
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SD2353 Arkusz danych(HTML) 2 Page - Toshiba Semiconductor

  2SD2353_06 Datasheet HTML 1Page - Toshiba Semiconductor 2SD2353_06 Datasheet HTML 2Page - Toshiba Semiconductor 2SD2353_06 Datasheet HTML 3Page - Toshiba Semiconductor 2SD2353_06 Datasheet HTML 4Page - Toshiba Semiconductor 2SD2353_06 Datasheet HTML 5Page - Toshiba Semiconductor  
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2SD2353
2006-11-21
2
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 60 V, IE = 0
―
―
100
μA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
―
―
100
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 50 mA, IB = 0
60
―
―
V
hFE (1)
VCE = 5 V, IC = 0.2 A
800
―
3200
DC current gain
hFE (2)
VCE = 5 V, IC = 1.5 A
350
―
―
Collector-emitter saturation voltage
VCE (sat)
IC = 1 A, IB = 10 mA
―
0.4
1.0
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 0.5 A
―
0.7
1.0
V
Transition frequency
fT
VCE = 5 V, IC = 0.5 A
―
18
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
42
―
pF
Marking
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
D2353
Part No. (or abbreviation code)



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