 |
Zakładka z wyszukiwarką danych komponentów |
|
|
Zakładka z wyszukiwarką danych komponentów |
|
2SA950 Arkusz danych(PDF) 1 Page - Toshiba Semiconductor |
|
|
|||||||||||||||||||||||||||||
2SA950 Arkusz danych(HTML) 1 Page - Toshiba Semiconductor |
|
|
1 / 3 page  2SA950 2007-11-01 1 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • 1 W output applications • Complementary to 2SC2120 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −35 V Collector-emitter voltage VCEO −30 V Emitter-base voltage VEBO −5 V Collector current IC −800 mA Base current IB −160 mA Collector power dissipation PC 600 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −35 V, IE = 0 ⎯ ⎯ −0.1 μA Emitter cut-off current IEBO VEB = −5 V, IC = 0 ⎯ ⎯ −0.1 μA Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −30 ⎯ ⎯ V hFE (1) (Note) VCE = −1 V, IC = −100 mA 100 ⎯ 320 DC current gain hFE (2) VCE = −1 V, IC = −700 mA 35 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = −500 mA, IB = −20 mA ⎯ ⎯ −0.7 V Base-emitter voltage VBE VCE = −1 V, IC = −10 mA −0.5 ⎯ −0.8 V Transition frequency fT VCE = −5 V, IC = −10 mA ⎯ 120 ⎯ MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ⎯ 19 ⎯ pF Note: hFE (1) classification O: 100~200, Y: 160~320 Unit: mm JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) |
Podobny numer części - 2SA950 |
|
Podobny opis - 2SA950 |
|
|
|
Link URL |
| Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Link do karty katalogowej | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Polish ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
