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TA2160FNG Arkusz danych(PDF) 3 Page - Toshiba Semiconductor |
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TA2160FNG Arkusz danych(HTML) 3 Page - Toshiba Semiconductor |
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3 / 17 page ![]() TA2160FNG 2004-05-11 3 Terminal Explanation (terminal voltage: typical terminal voltage at no signal with test circuit, VCC = 1.3 V, Ta = 25°C) Terminal No. Name Function Internal Circuit Termin al Voltage (V) 1 PRE OUTB 4 PRE OUTA Input of preamplifier 0.44 17 OUTB 18 OUTC 19 OUTA Output of power amplifier 0.56 2 PRE NFB 3 PRE NFA NF of preamplifier 0.7 29 INA 30 INB Input of preamplifier 0.73 5 VREF Reference circuit 0.73 27 VREF IN Input of reference circuit 0.73 6 PRE GND ⎯ ⎯ 0 7 BST SW Boost on/off switch BST on: H level or open BST off: L level Refer to application note 3 (2) This switch is the control terminal of the bass boost function. When it is synchronized with treble boost function, the external connection with the PW NF terminal is required. Refer to application circuit. ⎯ 12 PW MUTE Muting switch of power amplifier PW MUTE OFF: H level or open PW MUTE ON: L level Refer to application note 3 (2) ⎯ 4 27 5 20 k Ω 7 500 Ω VREF 10 pF 3 29 |
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