Data Sheet

ADRF5142

High Power, 40 W Peak, Silicon SPDT, Reflective Switch, 8 GHz to 11 GHz

Rev. 0

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FEATURES

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Frequency range: 8 GHz to 11 GHz

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Low insertion loss: 1.2 dB (typical)

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High isolation: 40 dB (typical)

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High input linearity

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0.1 dB power compression (P0.1dB): 46 dBm

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Third-order intercept (IP3): 70 dBm

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High power handling at TCASE = 85°C:

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Insertion loss path

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Average: 41 dBm

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Pulsed (> 100 ns pulse width, 15% duty cycle): 44 dBm

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Peak (≤ 100 ns peak duration, 5% duty cycle): 46 dBm

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Hot switching at RFC (Pin 3): 41 dBm

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Fast switching time: 60 ns

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0.1 dB RF settling time: 65 ns

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No low frequency spurious

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Positive control interface: CMOS-/LVTTL-compatible

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20-lead, 3.0 mm × 3.0 mm LGA package

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Pin compatible with ADRF5141 and ADRF5144

APPLICATIONS

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X-band communications and radars

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Electronic warfare

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Satellite communications

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Gallium nitride (GaN) and PIN diode replacement

FUNCTIONAL BLOCK DIAGRAM

Figure 1. Functional Block Diagram

GENERAL DESCRIPTION

The ADRF5142 is a reflective single-pole, double-throw (SPDT)

switch manufactured in the silicon process.

The ADRF5142 operates from 8 GHz to 11 GHz with a 1.2 dB

typical insertion loss and a 40 dB typical isolation. The device has

a radio frequency (RF) input power handling capability of 41 dBm

average power and 46 dBm peak power for the insertion loss path.

The ADRF5142 draws a low current of 130 μA on the positive sup-

ply of +3.3 V and 500 μA on negative supply of −3.3 V. The device

employs complementary metal-oxide semiconductor (CMOS)-/low-

voltage transistor to transistor logic (LVTTL)-compatible controls.

The ADRF5142 requires no additional driver circuitry, which makes

it an ideal alternative to GaN and PIN diode-based switches.

The ADRF5142 comes in a 20-lead, 3.0 mm × 3.0 mm, RoHS-com-

pliant, land grid array (LGA) package and operates from −40°C to

+85°C.