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TLN233F Arkusz danych(PDF) 2 Page - Toshiba Semiconductor

Numer części TLN233F
Szczegółowy opis  Infrared LED for Space-Optical-Transmission
PDF  5 Pages
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLN233F Arkusz danych(HTML) 2 Page - Toshiba Semiconductor

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TLN233(F)
2007-10-01
2
Optical and Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 100 mA
1.6
2.0
V
Reverse current
IR
VR = 4 V
60
μA
Radiant intensity
IE
IF = 50 mA
46
80
mW/sr
Radiant power
PO
IF = 50 mA
30
mW
Cut-off frequency
fc
IF = 50 mA + 5 mAP-P
(Note 3)
15
MHz
Peak emission wavelength
λP
IF = 50 mA
870
nm
Half-angle value
θ
2
1
IF = 50 mA
±13
°
Note 3: This is the frequency when modulation light power decreases by 3 dB from 1 MHz.
Handling Precautions
• Soldering must be performed under the stopper.
• When forming the leads, bend each lead at least 5 mm from the package body. Soldering must be performed
after the leads have been formed.
• The radiant intensity decreases over time due to current flowing in the infrared LED. When designing circuits,
take into account the change in radiant intensity over time. The change in radiant intensity is equal to the
reciprocal of the change in LED infrared optical output:
P (0)
o
P (t)
o
I (0)
E
I (t)
E
=
.



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