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2N2369 Arkusz danych(PDF) 1 Page - STMicroelectronics |
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2N2369 Arkusz danych(HTML) 1 Page - STMicroelectronics |
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1 / 4 page ![]() 2N2369 January 1989 HIGH-FREQUENCY SATURATED SWITCH The 2N2369 is a silicon planar epitaxial NPN tran- sistor in Jedec TO-18 metal case. It is designed spe- cifically for high-speed saturated switching applica- tions at current levels from 100 µA to 100 mA. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Val ue Unit VCBO Collector-base Voltage (IE =0) 40 V VCES Collector-emitter Voltage (V BE =0) 40 V VCEO Collector-emitter Voltage (IB =0) 15 V VEBO Emitter-base Voltage (I C = 0) 4.5 V I CM Collector Peak Current (t = 10 µs) 0.5 A Pto t Total Power Dissipation at T amb ≤ 25 °C at T cas e ≤ 25 °C at T cas e ≤ 100 °C 0.36 1.2 0.68 W W W T stg,Tj Storage and Junction Temperature – 65 to 200 °C Products approved to CECC 50004-022/023 available on request. DESCRIPTION TO-18 INTERNAL SCHEMATIC DIAGRAM 1/4 |
Podobny numer części - 2N2369 |
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