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STTH4R02S Arkusz danych(PDF) 5 Page - STMicroelectronics

Numer części STTH4R02S
Szczegółowy opis  Ultrafast recovery diode
PDF  13 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTH4R02S Arkusz danych(HTML) 5 Page - STMicroelectronics

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STTH4R02
Characteristics
5/13
Figure 9.
Junction capacitance versus
reverse applied voltage (typical
values)
Figure 10.
Reverse recovery charges versus
dIF/dt (typical values)
10
100
1
10
100
1000
C(pF)
F=1MHz
V
osc=30mVRMS
T
j=25°C
VR(V)
0
20
40
60
80
100
120
0
50
100
150
200
250
300
350
400
450
500
Q
RR(nC)
I
F=4A
V
R=160V
T
j=125°C
T
j=25°C
dIF/dt(A/µs)
Figure 11.
Reverse recovery time versus dIF/dt
(typical values)
Figure 12.
Peak reverse recovery current
versus dIF/dt (typical values)
0
10
20
30
40
50
60
70
80
10
100
1000
t
RR(ns)
I
F=4A
V
R=160V
T
j=125°C
T
j=25°C
dIF/dt(A/µs)
0
2
4
6
8
10
0
50
100
150
200
250
300
350
400
450
500
I
RM(A)
I
F=4A
V
R=160V
T
j=125°C
T
j=25°C
dIF/dt(A/µs)
Figure 13.
Dynamic parameters versus
junction temperature
Figure 14.
Thermal resistance, junction to
ambient, versus copper surface
under tab - DPAK (Epoxy printed
circuit board FR4, eCU = 35 µm)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25
50
75
100
125
150
Q
RR;IRM [Tj]/ QRR;IRM [Tj=125°C]
I
RM
Q
RR
I
F=4A
V
R=160V
Tj(°C)
0
10
20
30
40
50
60
70
80
90
100
0
5
10
15
20
25
30
35
40
R
th(j-a)(°C/W)
DPAK
SCU(cm²)



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