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LS914B Arkusz danych(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Numer części LS914B
Szczegółowy opis  500mW Hermetically Sealed Glass Fast Switching Diodes
PDF  2 Pages
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Producent  TSC [Taiwan Semiconductor Company, Ltd]
Strona internetowa  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

LS914B Arkusz danych(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

  LS914B Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd LS914B Datasheet HTML 2Page - Taiwan Semiconductor Company, Ltd  
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Pb
RoHS
COMPLIANCE
RoHS
COMPLIANCE
LS4448 /LS4148/LS914B
500mW Hermetically Sealed Glass Fast
Switching Diodes
QUADRO MINI MELF
Features
Fast switching device (TRR< 4.0nS)
Quadro Mini-MELF package
Surface device type mounting
Hermetically sealed glass
Compression bonded construction
All external surfaces are corrosion
resistant and leads are readily solderable
RoHS compliant
Matte Tin (Sn) lead finish
1
st band indicates cathode
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
oCambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
Value
Units
Power Dissipation
Pd
500
mW
Working Inverse Voltage
WIV
75
V
Non-repetitive Peak Forward Current
IFM
450
mA
Average Rectified Current
Io
150
mA
Peak Forward Surge Current
IFSURGE
2
A
Operating Junction Temperature
TJ
175
OC
Storage Temperature Range
TSTG
-65 to + 200
OC
Electrical Characteristics
Type Number
Symbol
Min
Max
Units
Breakdown Voltage
IR=100uA
IR=5uA
BV
100
75
V
Forward Voltage
LS4448, LS914B
IF=5.0mA
LS4148
IF= 10mA
LS4448, LS914B
IF =100mA
VF
0.62
-
0.72
1.0
1.0
V
Reverse Leakage Current
VR=20V
VR=75V
IR
25
5
nA
uA
Junction Capacitance
VR=0, f=1.0MHz
Cj
-
4.0
pF
Reverse Recovery Time (Note 1)
trr
-
4.0
nS
Notes: 1. Reverse Recovery Test Conditions: IF=IR=10mA, RL=100Ω, IRR=1mA
Version: B07


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