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CSD87313DMST Arkusz danych(PDF) 5 Page - Texas Instruments

Numer części CSD87313DMST
Szczegółowy opis  CSD87313DMS 30-V Dual N-Channel NexFET™ Power MOSFETs
PDF  15 Pages
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Producent  TI2 [Texas Instruments]
Strona internetowa  https://www.ti.com
Logo TI2 - Texas Instruments

CSD87313DMST Arkusz danych(HTML) 5 Page - Texas Instruments

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VS1S2 - Source1-to-Source2 Voltage (V)
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
200
D010
DC
10 s
1 s
100 ms
10 ms
1 ms
100 µs
tp - Pulse Duration (s)
0.0001
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
1000
10000
D013
Qg - Gate Charge (nC)
0
5
10
15
20
25
30
35
40
45
50
0
1
2
3
4
5
6
7
8
D010
VS1S2 - Source1-to-Source2 Voltage (V)
0
5
10
15
20
25
30
10
100
1000
10000
D010
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
VGS - Gate-to-Source Voltage (V)
0.5
0.75
1
1.25
1.5
1.75
2
2.25
2.5
0
12
24
36
48
60
72
84
96
108
120
D007
TC = 150°C
TC = 25°C
TC = -55°C
Vf
SS - Source-to-Drain Voltage (V)
0
0.2
0.4
0.6
0.8
1
1.2
0.0001
0.001
0.01
0.1
1
10
100
D009
TC = -55qC
TC = 25qC
TC = 125qC
5
CSD87313DMS
www.ti.com
SLPS642 – APRIL 2017
Product Folder Links: CSD87313DMS
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
Typical MOSFET Characteristics (continued)
TA = 25°C (unless otherwise stated)
VS1S2 = 5 V
Figure 7. Transfer Characteristics
Figure 8. Typical Diode Forward Voltage
ID = 23 A
VS1S2 = 15 V
Figure 9. Gate Charge
Figure 10. Capacitance
Single pulse, RθJA = 125°C/W
Figure 11. Maximum Safe Operating Area
RθJA = 125 °C/W, TA = 25°C
Figure 12. Single Pulse Maximum Power Dissipation



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