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74ACT10B Arkusz danych(PDF) 1 Page - STMicroelectronics |
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74ACT10B Arkusz danych(HTML) 1 Page - STMicroelectronics |
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1 / 7 page  74ACT10 TRIPLE 3-INPUT NAND GATE PRELIMINARY DATA May 1997 s HIGH SPEED: tPD = 6.5 ns (TYP.) at VCC =5V s LOW POWER DISSIPATION: ICC =4 µA (MAX.) at TA =25 oC s COMPATIBLE WITH TTL OUTPUTS VIH =2V (MIN), VIL = 0.8V (MAX) s 50 Ω TRANSMISSION LINE DRIVING CAPABILITY s SYMMETRICAL OUTPUT IMPEDANCE: |IOH|= IOL =24 mA (MIN) s BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL s OPERATING VOLTAGE RANGE: VCC (OPR) = 4.5V to 5.5V s PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 10 s IMPROVED LATCH-UP IMMUNITY DESCRIPTION The ACT10 is an advanced high-speed CMOS TRIPLE 3-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C 2MOS technology. It is ideal for low power applications mantaining high speed operation similar to equivalent Bipolar Schottky TTL. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. The device is designed to interface directly High Speed CMOS systems with TTL, NMOS and CMOS output voltage levels. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage. PIN CONNECTION AND IEC LOGIC SYMBOLS ORDER CODES : 74ACT10B 74ACT10M M (Micro Package) B (Plastic Package) 1/7 |
Podobny numer części - 74ACT10B |
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Podobny opis - 74ACT10B |
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