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Zakładka z wyszukiwarką danych komponentów |
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10ETF10FP-M3 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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10ETF10FP-M3 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Fast Soft Recovery Diode 10ETF10FP-M3 www.iscsemi.com 1 FEATURES · Fully Isolated Package · Low Forward Voltage Drop · Short Reverse Recovery Time APPLICATIONS · Inverters · Choppers · Converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 1000 V IF(AV) Average Rectified Forward Current 10 A IFSM Non-repetitive Peak Surge Current (10ms sine pulse) 140 A TJ Max. Junction Temperature 150 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃ /W 1 3 |
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