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CSD25481F4 Arkusz danych(PDF) 2 Page - Texas Instruments

Numer części CSD25481F4
Szczegółowy opis  CSD25481F4 20 V P-Channel FemtoFET™ MOSFET
PDF  11 Pages
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Producent  TI2 [Texas Instruments]
Strona internetowa  https://www.ti.com
Logo TI2 - Texas Instruments

CSD25481F4 Arkusz danych(HTML) 2 Page - Texas Instruments

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Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Specifications.................................................................. 3
5.1 Electrical Characteristics.............................................3
5.2 Thermal Information....................................................3
5.3 Typical MOSFET Characteristics................................ 4
6 Device and Documentation Support..............................7
6.1 Support Resources..................................................... 7
6.2 Trademarks.................................................................7
6.3 Electrostatic Discharge Caution..................................7
6.4 Glossary......................................................................7
7 Mechanical, Packaging, and Orderable Information.... 8
7.1 Mechanical Dimensions.............................................. 8
7.2 Recommended Minimum PCB Layout........................9
7.3 Recommended Stencil Pattern................................... 9
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision E (December 2017) to Revision F (February 2022)
Page
• Changed ultra-low profile bullet from 0.35 mm to 0.36 mm in height................................................................. 1
• Updated ultra-low profile image height from 0.35 mm to 0.36 mm..................................................................... 1
• Changed ultra-low profile image height from 0.35 mm to 0.36 mm.................................................................... 8
• Added FemtoFET Surface Mount Guide note.................................................................................................... 9
Changes from Revision D (October 2014) to Revision E (December 2017)
Page
• Changed the Pulsed Drain Current value From: –10 A To: –13.1 A in the Absolute Maximum Ratings table ...1
• Changed Note 1 From: Typical RθJA = 85°C/W To: Typical RθJA = 90°C/W....................................................... 1
• Changed Note 2 From: Pulse duration ≤ 300 μs, duty cycle ≤ 2% To: Pulse duration ≤ 100 μs, duty cycle ≤
1% ......................................................................................................................................................................1
• Changed the typical RθJA values in the Thermal Information table ....................................................................3
• Updated Figure 5-1. ...........................................................................................................................................4
• Updated Figure 5-10 with newly measured data. .............................................................................................. 4
• Updated all mechanical drawings, increased the size of the pads in the Section 7.3 section. .......................... 8
CSD25481F4
SLPS420F – SEPTEMBER 2013 – REVISED FEBRUARY 2022
www.ti.com
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