IXFN360N10T datasheet(1/3 Pages) ISC

Numer części	IXFN360N10T

Szczegółowy opis	N-Channel MOSFET

PDF	3 Pages

Scroll/Zoom	100%

Producent	ISC [Inchange Semiconductor Company Limited]

Strona internetowa	http://www.iscsemi.cn

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1 / 3 page

ISFM1343

eq IXFN360N10T

N-Channel MOSFET

www.iscsemi.com

1

DESCRIPTION

· Drain Current -ID= 360A@ TC=25℃

· Drain Source Voltage

-VDSS= 100V(Min)

· Static Drain-Source On-Resistance

-RDS(on) = 2.6mΩ(Max)@VGS= 10V

APPLICATIONS

· DC-DC converter

· Battery Chargers

· High Speed Power Switching Applications

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

100

V

VGSS

Gate-Source Voltage

±

20

V

ID

Drain Current-continuous@ TC=25℃

360

A

IDM

Pulse Drain Current

900

A

PD

Total Dissipation@TC=25℃

830

W

TJ

Max. Operating Junction Temperature

175

℃

Tstg

Storage Temperature Range

-55~175

℃

Viso

Isolation Voltage

2500

V

G

Weight

30

g

D

G

S

SOT-227

package

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IXFN360N10T Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited

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