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BD179 Arkusz danych(PDF) 2 Page - STMicroelectronics |
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BD179 Arkusz danych(HTML) 2 Page - STMicroelectronics |
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2 / 5 page ![]() THERMAL DATA Rthj-ca se Thermal Resistance Junction-case Max 4.16 oC/W ELECTRICAL CHARACTERISTICS (Tcase =25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it ICBO Collect or Cut-off Current (IE =0) VCB =80 V 100 µA IEBO Emitt er Cut-off Current (IC =0) VEB =5 V 1 mA VCEO(sus ) ∗ Collector-Emitter Sustaining Voltage IC =100 mA 80 V VCE(sat) ∗ Collector-Emitter Saturat ion Voltage IC =1 A IB = 0.1 A 0.8 V VBE ∗ Base-Emitt er Voltage IC =1 A VCE =2 V 1.3 V hFE ∗ DC Current G ain IC =150 mA VCE =2 V IC =1 A VCE =2 V 40 15 hFE hFE G roups IC =150 mA VCE = 2 V group 16 100 250 fT Transit ion F requency IC =250 mA VCE =10 V 3 MHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Derating Curves BD179 2/5 |
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