BD239C datasheet(2/4 Pages) STMICROELECTRONICS

Numer części	BD239C

Szczegółowy opis	NPN SILICON POWER TRANSISTOR

PDF	4 Pages

Scroll/Zoom	100%

Producent	STMICROELECTRONICS [STMicroelectronics]

Strona internetowa	http://www.st.com

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THERMAL DATA

Rthj-ca se

Rthj- amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

4.17

62.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICES

Collector Cut -of f

Current (VBE =0)

VCE =100 V

0.2

ICEO

Collector Cut -of f

Current (IB =0)

VCE =60 V

0.3

IEBO

Emitt er Cut -of f Current

(IC =0)

VEB =5 V

VCEO(sus )

∗ Collector-Emitter

Sustaining Voltage

IC = 30 mA

100

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC =1 A

IB = 0.2 A

0.7

VBE

∗

Base-Emitt er Voltage

IC =1 A

VCE =4 V

1.3

hFE

∗

DC Current Gain

IC =0.2 A

VCE =4 V

IC =1 A

VCE =4 V

hfe

Small Signal Current

Gain

IC =0. 2 A

VCE =10 V

f = 1MHz

IC =0.2 A

VCE =10 V

f = 1KHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2%

Safe Operating Areas

BD239C

2/4

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