Nexperia

PRMD13

50 V, 100 mA NPN/PNP Resistor-Equipped double Transistors (RET)

PRMD13

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Product data sheet

25 July 2017

8 / 16

VCE (V)

0

-5

-4

-2

-3

-1

aaa-018917

-0.04

-0.06

-0.02

-0.08

-0.1

IC

(A)

0

-0.28 mA

IB = -0.07 mA

-0.35 mA

-0.42 mA

-0.56 mA

-0.49 mA

-0.63 mA

-0.14 mA

-0.21 mA

-0.70 mA

Tamb = 25 °C

Fig. 11. PNP transistor: Collector current as a function

of collector-emitter voltage; typical values

aaa-018914

IC (mA)

-10-1

-102

-10

-1

-10-1

-1

VCEsat

(V)

-10-2

(1)

(3)

(2)

IC/IB = 20

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

Fig. 12. PNP transistor: Collector-emitter saturation

voltage as a function of collector current;

typical values

006aac826

IC (mA)

-10-1

-102

-10

-1

-1

-10

VI(on)

(V)

-10-1

(1)

(2)

(3)

VCE = -0.3 V

(1) Tamb = -40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig. 13. PNP transistor: On-state input voltage as a

function of collector current; typical values

IC (mA)

-10-1

-10

-1

006aac827

-1

-10

VI(off)

(V)

-10-1

(1)

(2)

(3)

VCE = -5 V

(1) Tamb = -40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig. 14. PNP transistor: Off-state input voltage as a

function of collector current; typical values