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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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BFY50 Arkusz danych(PDF) 1 Page - STMicroelectronics |
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BFY50 Arkusz danych(HTML) 1 Page - STMicroelectronics |
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1 / 5 page  BFY50/51 MEDIUM POWER AMPLIFIER DESCRIPTION The BFY50 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. INTERNAL SCHEMATIC DIAGRAM November 1997 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BFY50 BFY51 VCBO Collect or-Base Voltage (IE =0) 80 60 V VCEO Collect or-Emitt er Voltage (IB =0) 35 30 V VEBO Emitt er-Base Voltage (IC =0) 6 V IC Collect or Current 1 A ICM Collect or Peak Current (tp <5 ms) 1.5 A Ptot Total Dissipation at Tamb ≤ 25 oC at Tcase ≤ 25 oC 0.8 5 W W Tstg St orage Temperature -65 t o 200 oC Tj Max. Operating Junction Temperature 200 oC TO-39 1/5 |
Podobny numer części - BFY50 |
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Podobny opis - BFY50 |
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