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L6206PD Arkusz danych(PDF) 17 Page - STMicroelectronics

Numer części L6206PD
Szczegółowy opis  DMOS dual full bridge driver
PDF  29 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L6206PD Arkusz danych(HTML) 17 Page - STMicroelectronics

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L6206
Application information
29
6
Application information
A typical application using the L6206 device is shown in Figure 14. Typical component
values for the application are shown in Table 8. A high quality ceramic capacitor in the range
of 100 to 200 nF should be placed between the power pins (VSA and VSB) and ground near
the L6206 device to improve the high frequency filtering on the power supply and reduce
high frequency transients generated by the switching. The capacitors connected from the
ENA/OCDA and ENB/OCDB nodes to ground set the shutdown time for the bridge A and
bridge B respectively when an overcurrent is detected (see Section 5.3: Non-dissipative
overcurrent detection and protection on page 13). The two current sources (SENSEA and
SENSEB) should be connected to power ground with a trace length as short as possible in
the layout. To increase noise immunity, unused logic pins are best connected to 5 V (high
logic level) or GND (low logic level) (see Table 4: Pin description on page 6). It is
recommended to keep power ground and signal ground separated on the PCB.
Figure 14. Typical application (with reference to 24-pin packages)
Table 8. Component values for typical application
Component
Value
Component
Value
C1
100
FD1
1N4148
C2
100 nF
D2
1N4148
CBOOT
220 nF
RCLA
5 K
CP
10 nF
RCLB
5 K
CENA
5.6 nF
RENA
100 k
CENB
5.6 nF
RENB
100 k



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