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SN74LVC1G79DBVT Arkusz danych(PDF) 5 Page - Texas Instruments

Numer części SN74LVC1G79DBVT
Szczegółowy opis  SN74LVC1G79 Single Positive-Edge-Triggered D-Type Flip-Flop
PDF  32 Pages
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Producent  TI2 [Texas Instruments]
Strona internetowa  https://www.ti.com
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SN74LVC1G79DBVT Arkusz danych(HTML) 5 Page - Texas Instruments

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SN74LVC1G79
www.ti.com
SCES220U – APRIL 1999 – REVISED APRIL 2017
Product Folder Links: SN74LVC1G79
Submit Documentation Feedback
Copyright © 1999–2017, Texas Instruments Incorporated
(1)
All unused inputs of the device must be held at VCC or GND to ensure proper device operation. See Implications of Slow or Floating
CMOS Inputs, SCBA004.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
VCC
Supply voltage
Operating
1.65
5.5
V
Data retention only
1.5
VIH
High-level input voltage
VCC = 1.65 V to 1.95 V
0.65 × VCC
V
VCC = 2.3 V to 2.7 V
1.7
VCC = 3 V to 3.6 V
2
VCC = 4.5 V to 5.5 V
0.7 × VCC
VIL
Low-level input voltage
VCC = 1.65 V to 1.95 V
0.35 × VCC
V
VCC = 2.3 V to 2.7 V
0.7
VCC = 3 V to 3.6 V
0.8
VCC = 4.5 V to 5.5 V
0.3 × VCC
VI
Input voltage
0
5.5
V
VO
Output voltage
0
VCC
V
IOH
High-level output current
VCC = 1.65 V
–4
mA
VCC = 2.3 V
–8
VCC = 3 V
–16
–24
VCC = 4.5 V
–32
IOL
Low-level output current
VCC = 1.65 V
4
mA
VCC = 2.3 V
8
VCC = 3 V
16
24
VCC = 4.5 V
32
Δt/Δv
Input transition rise or fall rate
VCC = 1.8 V ± 0.15 V, 2.5 V ± 0.2 V
20
ns/V
VCC = 3.3 V ± 0.3 V
10
VCC = 5 V ± 0.5 V
5
TA
Operating free-air temperature
–40
125
°C
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.4 Thermal Information
THERMAL METRIC(1)
SN74LVC1G79
UNIT
DBV (SOT-23)
DCK (SC70)
DRL (SOT)
YZP (DSBGA)
5 PINS
5 PINS
5 PINS
5 PINS
RθJA
Junction-to-ambient thermal resistance
247.2
277.6
294.3
144.4
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
154.5
179.5
129.9
1.3
°C/W
RθJB
Junction-to-board thermal resistance
86.8
75.9
143.4
39.9
°C/W
ψJT
Junction-to-top characterization parameter
58.0
49.7
14.3
0.5
°C/W
ψJB
Junction-to-board characterization
parameter
86.4
75.1
144.0
39.7
°C/W



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