BL-R4532J datasheet(1/2 Pages) BRIGHT

Numer części	BL-R4532J

Szczegółowy opis	GaAsP/GaP Hi-Eff Red Low power consumption.

PDF	2 Pages

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Producent	BRIGHT [BRIGHT LED ELECTRONICS CORP]

Strona internetowa	http://www.brightled.co.kr

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1 / 2 page

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Ver.2.0 Page 1 of 2

SINCE 1981

1.5(.059)

MAX.

2.54(.100)

NOM.

6.0(.236)

1.8(.071)

1.0(.04) MIN.

25.4(1.00) MIN.

0.5(.020)

SQ.TYP.

5.1(.201)

2.8(.110)

2.0(.079)

5.0(.197)

Notes:

1. All dimensions are in millimeters (inches).

2. Tolerance is ±0.25mm (0.01”) unless otherwise specified.

3. Lead spacing is measured where the leads emerge from

the package.

4. Specifications are subject to change without notice.

● Features:

●Package dimensions:

1. Chip material: GaAsP/GaP

2. Emitted color : Hi-Eff Red

3. Lens Appearance : Red Diffused

4. Low power consumption.

5. Most suitable for use like level indicator.

6. Excellent uniformity of light emittance.

7. Long life solid state reliability.

8. Compatible.

9. This product don’t contained restriction

substance, compliance ROHS standard.

● Applications:

1. TV set

2. Monitor

3. Telephone

4. Computer

5. Circuit board

● Absolute maximum ratings(Ta=25℃)

Parameter

Symbol

Rating

Unit

Power Dissipation

Pd

80

mW

Forward Current

IF

30

mA

Peak Forward Current*1

IFP

150

mA

Reverse Voltage

VR

5

V

Operating Temperature

Topr

-40℃~80℃

Storage Temperature

Tstg

-40℃~85℃

Soldering Temperature

Tsol

260℃(for 5 seconds)

*1Condition for IFP is pulse of 1/10 duty and 0.1msec width.

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