BULD118 datasheet(2/7 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-ca se

Rthj- amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

6.25

100

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICES

Collect or Cut-off

Current (VBE =0)

VCE =700 V

Tj =125

o C

100

500

µA

VEBO

Emitt er-Base Voltage

IE =10 mA

VCEO(sus)

Collect or-Emitter

Sustaining Voltage

IC = 100 mA

L = 25 mH

400

ICEO

Collect or-Emitter

Leakage Current

VCE =400 V

250

µA

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =0.5 A

IB =0.1 A

IC =1 A

IB =0.2 A

IC =2 A

IB =0.4 A

0.5

1.5

VBE(s at)

∗ Base-Emitter

Saturat ion Voltage

IC =0.5 A

IB =0.1 A

IC =1 A

IB =0.2 A

IC =2 A

IB =0.4 A

1.0

1.2

1.3

hFE

∗

DC Current G ain

IC =10 mA

VCE =5 V

IC =0.5 A

VCE =5 V

IC =2 A

VCE =5 V

RESI STIVE LO AD

Rise Time

Fall T ime

St orage Time

group A

group B

VCC = 125 V

IC =2 A

IB1 =0.4 A

IB2 =-0.2 A

tp =30

µs

1. 4

0.7

0.3

0.5

2.1

2.75

µs

INDUCTIVE LOAD

St orage Time

Fall T ime

IC =1 A

IB1 =0.2 A

VBE = -5V

L= 50 mH

Vcla mp = 300 V

0.8

0. 10

µs

Diode Forward Volt age IC = 1 A

2.5

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Note : Product is pre-selected in storage time (GROUP A and GROUP B). SGS-THOMSON reserves the right to ship either groups

according to production availability. Please contact your nearest SGS THOMSON MICROELECTRONICS sales office for delivery details.

BULD118D-1

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