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BUTW92 Arkusz danych(PDF) 1 Page - STMicroelectronics |
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BUTW92 Arkusz danych(HTML) 1 Page - STMicroelectronics |
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1 / 4 page  BUTW92 HIGH CURRENT NPN SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s NPN TRANSISTOR APPLICATIONS: s MOTOR CONTROL s HIGH FREQUENCY AND EFFICIENCY CONVERTERS DESCRIPTION High current, high speed transistor suited for power conversion applications, high efficency converters and motor controls. INTERNAL SCHEMATIC DIAGRAM July 1997 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0) 500 V VCEO Collector-Emitter Voltage (IB = 0) 250 V VEBO Emitter-Base Voltage (IC = 0) 7 V IE Emitter-Current 60 A IEM Emitter Peak Current (tp < 5ms) 70 A IB Base Current 15 A IBM Base Peak Current (tp < 5ms) 18 A Ptot Total Dissipation at Tc ≤ 25 oC 180 W Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC For PNP type voltage and current values are negative. 1 2 3 TO-247 1/4 |
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