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BUZ10 Arkusz danych(PDF) 3 Page - STMicroelectronics |
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BUZ10 Arkusz danych(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions Min. Typ. Max. Unit ISD ISDM Source-drain Current Source-drain Current (pulsed) 23 92 A A VSD ( ∗)Forward On Voltage ISD =46 A VGS =0 1. 9 V trr Qrr Reverse Recovery Time Reverse Recovery Charge ISD = 23 A di/dt = 100 A/ µs VDD =30 V Tj =150 oC 50 0.17 ns µC ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Thermal Impedance BUZ10 3/8 |
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