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STTH16R04CT Arkusz danych(PDF) 2 Page - STMicroelectronics |
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STTH16R04CT Arkusz danych(HTML) 2 Page - STMicroelectronics |
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2 / 10 page ![]() Characteristics STTH16R04C 2/10 1 Characteristics When the diodes are used simultaneously: ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 400 V IF(RMS) RMS forward current 30 A IF(AV) Average forward current, δ = 0.5 TO-220AB / D2PAK Per diode Tc = 150° C 8 A Per device Tc = 145° C 16 TO-220FPAB Per diode Tc = 125° C 8 Per device Tc = 90° C 16 IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 120 A Tstg Storage temperature range -65 to +175 ° C Tj Maximum operating junction temperature range -40 to +175 ° C Table 2. Thermal parameters Symbol Parameter Value Unit Rth(j-c) Junction to case TO-220AC / D2PAK Per diode 2 °C/W Per device 1.15 TO-220FPAB Per diode 4.6 per device 3.8 Rth(c) Coupling TO-220AC / D2PAK Per device 0.3 °C/W TO-220FPAB per device 3 |
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