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STTH16R04CT Arkusz danych(PDF) 2 Page - STMicroelectronics

Numer części STTH16R04CT
Szczegółowy opis  Ultrafast recovery diode
PDF  10 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTH16R04CT Arkusz danych(HTML) 2 Page - STMicroelectronics

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Characteristics
STTH16R04C
2/10
1
Characteristics
When the diodes are used simultaneously:
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Table 1.
Absolute ratings (limiting values at 25° C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
400
V
IF(RMS)
RMS forward current
30
A
IF(AV)
Average forward current,
δ = 0.5
TO-220AB / D2PAK
Per diode Tc = 150° C
8
A
Per device Tc = 145° C
16
TO-220FPAB
Per diode Tc = 125° C
8
Per device Tc = 90° C
16
IFSM
Surge non repetitive forward current tp = 10 ms Sinusoidal
120
A
Tstg
Storage temperature range
-65 to +175
° C
Tj
Maximum operating junction temperature range
-40 to +175
° C
Table 2.
Thermal parameters
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
TO-220AC / D2PAK
Per diode
2
°C/W
Per device
1.15
TO-220FPAB
Per diode
4.6
per device
3.8
Rth(c)
Coupling
TO-220AC / D2PAK
Per device
0.3
°C/W
TO-220FPAB
per device
3



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