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RFD7N10LE Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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RFD7N10LE Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc N-Channel MOSFET Transistor RFD7N10LE www.iscsemi.com 1 FEATURES ·Drain Current -ID= 7A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 5V DESCRIPTION · DC-to-DC Converter · General Industrial Applications · Power Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous -8/+10 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pulse 28 A PD Total Dissipation @TC=25℃ 47 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.19 ℃ /W |
Podobny numer części - RFD7N10LE |
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Podobny opis - RFD7N10LE |
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