BYT60P-400. datasheet(4/7 Pages) STMICROELECTRONICS

4 / 7 page

BYT60P-400 / BYT260PIV-400 / BYT261PIV-400

4/7

1E-3

1E-2

1E-1

1E+0

0.1

0.2

0.5

1.0

tp(s)

K=[Zth(j-c)/Rth(j-c)]

δ=tp/T

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Fig. 5-1: Relative variation of thermal impedance

junction to case versus pulse duration (per diode

for ISOTOP).

1E-3

1E-2

1E-1

1E+0

0.1

0.2

0.5

1.0

tp(s)

K=[Zth(j-c)/Rth(j-c)]

δ=tp/T

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Fig. 5-2: Relative variation of thermal impedance

junction to case versus pulse duration (SOD93).

0.0

0.5

1.0

1.5

2.0

2.5

3.0

100

500

VFM(V)

IFM(A)

Typical values

Tj=100

°C

Tj=25

°C

Tj=100

°C

Fig. 6: Forward voltage drop versus forward

current (maximum values, per diode for ISOTOP).

100

200

100

120

140

160

180

200

VR(V)

C(pF)

F=1MHz

Tj=25

°C

Fig. 7: Junction capacitance versus reverse

voltage applied (typical values, per diode for

ISOTOP).

100

200

500

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

dIF/dt(A/

µs)

Qrr(

µC)

IF=IF(av)

90% confidence

Tj=100

°C

Fig. 8: Recovery charges versus dIF/dt (per diode

for ISOTOP).

100

200

500

dIF/dt(A/

µs)

IRM(A)

IF=IF(av)

90% confidence

Tj=100

°C

Fig. 9: Recovery current versus dIF/dt (per diode

for ISOTOP).

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