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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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MSC080SMA120B Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MSC080SMA120B Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  ISCF8113 eq MSC080SMA120B SiC N-Channel MOSFET www.iscsemi.com 1 FEATURES · High Blocking Voltage with Low On-Resistance · RDS(ON)= 80mΩ（TYP.）@VGS= 20V TJ=25℃ · High Speed Switching with Low Capacitance · Easy to Parallel and Simple to Drive APPLICATIONS · Solar Inverters · Switch Mode Power Supplies · DC-DC Converters · Motor drives Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1200 V VGSS Gate-Source Opetation Voltage -10/+25 V ID Drain Current-Continuous 30 A Drain Current-Continuous@Tc=100℃ 22 A IDM Drain Current-Single Pluse 75 A PD Total Dissipation @TC=25℃ 165 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.91 ℃ /W |
Podobny numer części - MSC080SMA120B |
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Podobny opis - MSC080SMA120B |
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