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STTH4R02SY Arkusz danych(PDF) 1 Page - STMicroelectronics |
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STTH4R02SY Arkusz danych(HTML) 1 Page - STMicroelectronics |
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1 / 14 page  April 2016 DocID17391 Rev 2 1/14 This is information on a product in full production. www.st.com STTH4R02-Y Automotive ultrafast recovery diode Datasheet - production data Features Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature PPAP capable AEC-Q101 qualified Description This device uses ST's new 200 V planar Pt doping technology, and it is especially suited for switching mode base drive and transistor circuits. Packaged in SMB, SMC and DPAK, it is intended for use in low voltage, high frequency inverters, freewheeling and polarity protection in automotive applications. Table 1: Device summary Symbol Value IF(AV) 4 A VRRM 200 V Tj (max.) 175 °C VF (typ.) 0.76 V trr (typ.) 16 ns SMB K K A SMC A K A A DPAK K NC |
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