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ACT3704 Arkusz danych(PDF) 3 Page - Active-Semi, Inc |
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ACT3704 Arkusz danych(HTML) 3 Page - Active-Semi, Inc |
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3 / 15 page ![]() ACT3704 Rev2, 26-Jul-07 Innovative Products. Active Solutions. - 3 - www.active-semi.com Copyright © 2007 Active-Semi, Inc. ABSOLUTE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS : Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods may affect device reliability. (VIN = VTERM + 1V, VBAT = 3.6V, TA = 25°C, unless otherwise specified.) PARAMETER CONDITIONS MIN TYP MAX UNIT Input Supply Voltage, VIN 4.2 12 V ADJ = G 4.079 4.1 4.121 V TA = -40°C to 85°C 4.059 4.141 ADJ = IN 4.179 4.2 4.221 TA = -40°C to 85°C 4.158 4.242 Line Regulation VIN = VTERM + 1V to 12V, IBAT = 10mA 0.03 0.1 %/V Load Regulation VIN = VTERM + 1V, IBAT = 10mA to 250mA 0.05 0.1 % Precondition Threshold 2.55 2.75 2.95 V Precondition Threshold Hysteresis 125 mV Constant Current Adjust Range 100 1000 mA Fast Charge Constant Current VBAT = 3.8V, RISET = 50k 0.45 0.51 0.57 A Precondition Charge Current VBAT = 2.5V, RISET = 50k 51 mA End-of-Charge Threshold RISET = 50k 51 mA Charge Restart Threshold VBAT Falling VTERM - 0.1 V PMOS On Resistance VBAT = 3.8V, IBAT = 100mA 0.7 1.2 Ω UVLO Threshold IN Rising 3.8 4.0 4.2 V UVLO Hysteresis IN Falling 1 V BAT Reserve Leakage Current Input floating or charger disabled 0.4 4 µA IN Supply Current Charger Standby 500 800 µA IN Supply Current Charger Enable 0.7 2 mA ADJ Voltage Threshold 1.7 V Battery Termination Voltage, VTERM Thermal Regulation Threshold 120 °C PARAMETER VALUE UNIT IN, ADJ, nSTAT, nEOC to G -0.3 to 15 V BAT to G -0.3 to 7 V ISET, TIMER to G -0.3 to 6 V ISET, TIMER Current ±5 mA Junction to Ambient Thermal Resistance (θJA) SOP-8/EP 45 °C/W TDFN33-8 36.7 °C/W Maximum Power Dissipation SOP-8/EP 1.8 W TDFN33-8 2 W Maximum Junction Temperature 125 °C Storage Temperature -65 to 150 °C Lead Temperature (Soldering, 10 sec) 300 °C |
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