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PDD4956 Arkusz danych(PDF) 3 Page - Potens Semiconductor Corp. |
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PDD4956 Arkusz danych(HTML) 3 Page - Potens Semiconductor Corp. |
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3 / 5 page ![]() Potens semiconductor corp. Ver.1.00 3 PDD4956 40V N-Channel MOSFETs Fig.5 Normalized Transient Impedance Fig.6 Maximum Safe Operation Area Fig.1 Continuous Drain Current vs. TC Fig.2 Normalized RDSON vs. TJ Fig.3 Normalized Vth vs. TJ Fig.4 Gate Charge Waveform VDS , Drain to Source Voltage (V) Square Wave Pulse Duration (s) Qg , Gate Charge (nC) TJ , Junction Temperature (℃) TJ , Junction Temperature (℃) TC , Case Temperature (℃) |
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