LET8180 datasheet(2/4 Pages) STMICROELECTRONICS

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LET8180

2/4

ELECTRICAL SPECIFICATION (TCASE = 25

°C)

STATIC (Per Section)

ESD PROTECTION CHARACTERISTICS

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

VGS = 0 V

ID = 10 µA

IDSS

VGS = 0 V

VDS = 32 V

µA

IGSS

VGS = 5 V

VDS = 0 V

µA

VGS(Q)

VDS = 32 V

ID = TBD

2.5

4.5

VDS(ON)

VGS = 10 V

ID = 3 A

0.28

0.45

GFS

VDS = 10 V

ID = 3 A

2.6

mho

CISS*VGS = 0 V

VDS = 32 V

f = 1 MHz

TBD

COSS

VGS = 0 V

VDS = 32 V

f = 1 MHz

CRSS

VGS = 0 V

VDS = 32 V

f = 1 MHz

2.5

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

DYNAMIC (

f = 860 MHz)

POUT

(1)

VDD = 32 V

IDQ = TBD

200

220

ηD(1)

VDD = 32 V

IDQ = TBD

(2)

VDD = 32 V

IDQ = TBD

POUT = 200 W PEP

IMD3(2)

VDD = 32 V

IDQ = TBD

POUT = 200 W PEP

-31

dBc

Load

mismatch

VDD = 32 V

IDQ = TBD

POUT = 200 W

ALL PHASE ANGLES

10:1

VSWR

DYNAMIC (

f = 470 - 860 MHz)

POUT

(1)

VDD = 32 V

IDQ = TBD

180

ηD(1)

VDD = 32 V

IDQ = TBD

(1)

VDD = 32 V

IDQ = TBD

14.5

Test Conditions

Class

Human Body Model

Machine Model

* Includes Internal Input Moscap.

(1) 1 dB Compression point

(2) f1 = 860 MHz, f2 = 860.1 MHz

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