STPS30L60CW datasheet(4/11 Pages) STMICROELECTRONICS

4 / 11 page

Characteristics

STPS30L60C

4/11

Figure 7.

Relative variation of thermal

impedance junction to case versus

pulse duration (TO-220AB, TO-247,

D2PAK, I2PAK)

Figure 8.

Relative variation of thermal

impedance junction to case versus

pulse duration (TO-220FPAB)

1E-4

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

Z/R

th(j-c)

t (s)

Single pulse

δ = 0.1

δ = 0.2

δ = 0.5

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

δ=0.1

δ=0.2

δ=0.5

Single pulse

δ=tp/T

TO-220FPAB

Z/R

th(j-c)

t (s)

Figure 9.

Reverse leakage current versus

reverse voltage applied

(typical values, per diode)

Figure 10.

Junction capacitance versus

reverse voltage applied

(typical values, per diode)

10 15 20 25 30 35 40 45 50 55 60

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

I (mA)

Tj=125°C

Tj=25°C

Tj=150°C

Tj=100°C

Tj=75°C

Tj=50°C

V (V)

100

0.1

0.2

0.5

1.0

2.0

C(nF)

F=1MHz

Tj=25°C

VR(V)

Figure 11.

Forward voltage drop versus

forward current (maximum values,

per diode)

Figure 12.

Thermal resistance junction to

ambient versus copper surface

under tab for D2PAK (Epoxy printed

circuit board FR4, copper

thickness: 35 µm)

0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50

100

200

(A)

Tj=25°C

Tj=125°C

Typical values

Tj=150°C

(V)

S(cm²)

(°C/W)

th(j-a)

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