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Zakładka z wyszukiwarką danych komponentów |
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IRFZ24VPBF Arkusz danych(PDF) 1 Page - International Rectifier |
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IRFZ24VPBF Arkusz danych(HTML) 1 Page - International Rectifier |
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1 / 9 page  IRFZ24VPbF HEXFET® Power MOSFET 8/3/04 Parameter Typ. Max. Units RθJC Junction-to-Case ––– 3.4 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 Thermal Resistance www.irf.com 1 VDSS = 60V RDS(on) = 60mΩ ID = 17A S D G TO-220AB Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description PD - 95623 Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 A IDM Pulsed Drain Current 68 PD @TC = 25°C Power Dissipation 44 W Linear Derating Factor 0.29 W/°C VGS Gate-to-Source Voltage ± 20 V IAR Avalanche Current 17 A EAR Repetitive Avalanche Energy 4.4 mJ dv/dt Peak Diode Recovery dv/dt 4.2 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) l Lead-Free |
Podobny numer części - IRFZ24VPBF |
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Podobny opis - IRFZ24VPBF |
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