LRI512 datasheet(47/54 Pages) STMICROELECTRONICS

Numer części	LRI512

Szczegółowy opis	Memory TAG IC 512 bit High Endurance EEPROM 13.56MHz, ISO 15693 Standard Compliant with E.A.S.

PDF	54 Pages

Scroll/Zoom	100%

Producent	STMICROELECTRONICS [STMicroelectronics]

Strona internetowa	http://www.st.com

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LRI512

Table 59. AC Characteristics

Note: 1. PA Min is the minimum H-field required to communicate with the LRI512

PA Max is the maximum H-field that the device can support before clamping the incoming signal

Symbol

Parameter

Test Condition (in addition to

those in Table 57)

Min.

Typ.

Max.

Unit

fCC

External RF Signal Frequency

13.553

13.56

13.567

MHz

MICARRIER 10% Carrier Modulation Index

MI=(A-B)/(A+B)

tRFR, tRFF

10% Rise and Fall time

3.0

µs

tRFSBL

10% Minimum Pulse Width for

bit

7.1

9.44

µs

MICARRIER 100% Carrier Modulation Index

MI=(A-B)/(A+B)

100

tRFR, tRFF

100% Rise and Fall time

3.5

µs

tRFSBL

100% Minimum Pulse Width for

bit

7.1

9.44

µs

tJIT

Bit pulse Jitter

-2

µs

tMAX

Maximum Carrier Rise Time

Zero to Maximum field strength

induced Voltage on Coil

V/µs

tMINCD

Minimum Time from Carrier

Generation to First Data

From H-field min

0.1

fSH

Subcarrier Frequency High

FCC/32

423.75

kHz

fSL

Subcarrier Frequency Low

FCC/28

484.28

kHz

Time for LRI512 Response

4224/FS

313

320.9

322

µs

Time between Commands

4224/FS

309

311.5

314

µs

Resistive Load (for Modulation)

500

1000

2000

Ω

H-field Energy on LRI512

Antenna

A1T/ISOR

0.15

A/m

A1S/ISOR

0.15

A/m

A2T/ISOK

0.15

A/m

C40

A/m

Programming Time

5ms

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