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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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AP2P03DW Arkusz danych(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP2P03DW Arkusz danych(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page  AP2P03DW -30V P-Channel Enhancement Mode MOSFET AP2P03DW REV1.0 永源微電子科技有限公司 Description The AP2P03DW uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS =-30V ID =-2.7A RDS(ON) < 100mΩ @ VGS=10V （Type：80mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP2P03DW SOT363-6L 2P03DW 3000 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Max. Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V ID@TC=25 ℃ Continuous Drain Current, VGS @ 10V1 -2.7 A ID@TC=100 ℃ Continuous Drain Current, VGS @ 10V1 -1.2 A IDM Pulsed Drain Current -10.8 A PD@TC=25 ℃ Power Dissipation 1.3 W TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ RθJA Thermal Resistance Junction-Ambient 1 416 ℃/W |
Podobny numer części - AP2P03DW |
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Podobny opis - AP2P03DW |
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