AP5G10DF

100V N+P-Channel Enhancement Mode MOSFET

AP5G10DF REV1.0

永源微電子科技有限公司

N-Electrical Characteristics (TJ=25

℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max. Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

100

113

-

V

IDSS

Zero Gate Voltage Drain Current

VDS=100V, VGS=0V,

-

-

1.0

μA

IGSS

Gate to Body Leakage Current

VDS=0V, VGS=±20V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250μA

1.2

2.0

2.5

V

RDS(on)

Static Drain-Source on-Resistance note3

VGS=10V, ID=5A

-

85

120

mΩ

VGS=4.5V, ID=3A

-

95

150

mΩ

g fs

Forward Transconductance

V DS =5V , I D =5A

14

S

RG

Gate Resistance

VDS = 0V, VGS =0V,f =1MHz

3

Ω

Ciss

Input Capacitance

VDS=15V, VGS=0V, f=1.0MHz

-

1100

-

pF

Coss

Output Capacitance

-

55

-

pF

Crss

Reverse Transfer Capacitance

-

40

-

pF

Qg

Total Gate Charge

VDS=50V,

ID=5A,

VGS=10V

-

11.9

-

nC

Qgs

Gate-Source Charge

-

2.8

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

1.7

-

nC

td(on)

Turn-on Delay Time

VDS=30V, ID=5A,

RG=1.8Ω, VGS=10V

-

3.8

-

ns

tr

Turn-on Rise Time

-

25.8

-

ns

td(off)

Turn-off Delay Time

-

16

-

ns

tf

Turn-off Fall Time

-

8.8

-

ns

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

-

-

14.6

A

ISM

Pulsed Source Current2,5

-

-

25

A

VSD

Diode Forward Voltage2

VGS=0V, IS=10A

-

-

1.2

V

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150

℃ junction temperature

4、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.