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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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AP5N06AI Arkusz danych(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP5N06AI Arkusz danych(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page  AP5N06AI 60V N-Channel Enhancement Mode MOSFET AP5N06AI REV1.0 永源微電子科技有限公司 Description The AP5N06AI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 60V ID =5A RDS(ON) <55mΩ @ VGS=10V（Type：42mΩ） Application LED lamp Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP5N06AI SOT23L 5N06A 3000 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Max. Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V ID@TC=25 ℃ Continuous Drain Current, VGS @ 10V1 5 A ID@TC=100 ℃ Continuous Drain Current, VGS @ 10V1 3.8 A IDM Pulsed Drain Current 15 A EAS Single Pulsed Avalanche Energy 9.3 mJ PD@TC=25 ℃ Power Dissipation 24 W TJ, TSTG Operating and Storage Temperature Range -55 to +175 ℃ RθJA Thermal Resistance Junction-Ambient 1 125 ℃/W RθJC Thermal Resistance Junction-Case1 6.3 ℃/W |
Podobny numer części - AP5N06AI |
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Podobny opis - AP5N06AI |
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