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AP8P03MSI Arkusz danych(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP8P03MSI Arkusz danych(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page ![]() AP8P03MSI -30V P-Channel Enhancement Mode MOSFET AP8P03MSI REV1.0 永源微電子科技有限公司 Description The AP8P03MSI uses advanced Trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -30V ID =-8.2A RDS(ON) < 40mΩ @ VGS=10V (Type:33mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP8P03MSI SOT223-3L AP8P03MSI XXX YYYY 3000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Max. Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V ID@TC=25 ℃ Continuous Drain Current, VGS @ -10V1 -8.2 A ID@TC=100 ℃ Continuous Drain Current, VGS @ -10V1 -6.2 A IDM Pulsed Drain Current note1 -18.4 A PD Power Dissipation TA = 25 ℃ 2.15 W TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ RθJA Thermal Resistance, Junction to Ambient 125 ℃/W RθJC Thermal Resistance from Junction to Ambient2 104 ℃/W |
Podobny numer części - AP8P03MSI |
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Podobny opis - AP8P03MSI |
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