AP12H02TS datasheet(4/7 Pages) APME

4 / 7 page

AP12H02TS

20V N+N-Channel Enhancement Mode MOSFET

AP12H02TS Rve:3.8

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

Fig 11. Transfer Characteristics

Fig 12. Gate Charge Waveform

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

t , Pulse Width (s)

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

PDM

0.02

Duty factor = t/T

Peak Tj = PDM x Rthjc + TC

0.1

100

0.01

0.1

100

V DS , Drain-to-Source Voltage (V)

T C =25

o C

Single Pulse

10us

100us

1ms

10ms

Q G , Total Gate Charge (nC)

I D =20 A

V DS =10V

400

800

1200

1600

2000

2400

V DS , Drain-to-Source Voltage (V)

f=1.0MHz

C iss

C oss

C rss

012

V GS , Gate-to-Source Voltage (V)

T j =150

o C

T j =25

o C

V DS =5V

T j = -55

o C

Operation in this area

limited by RDS(ON)

4.5V

QGS

QGD

Charge

永源微電子科技有限公司

AP12H02TS Arkusz danych(PDF) 4 Page - A POWER MICROELECTRONICS

AP12H02TS Arkusz danych(HTML) 4 Page - A POWER MICROELECTRONICS

Html Pages

1 2 3 4 5 6 7

Arkusz danych Pobierz

Link URL