2

SP8714

ELECTRICAL CHARACTERISTICS

Guaranteed over the following conditions (unless otherwise stated):

Characteristic

Units

Conditions

Supply current

(note 3)

6.8

8.5

mA

Power down input low

Supply current

(note 3)

8

50

µA

Power down input high

Power down high

V

Power down low

0

V

Modulus control high

(note 4)

V

Divide by 32 or 64

Modulus control low

(note 4)

0

V

Divide by 33 or 65

Ratio select high

(note 4, 9)

V

Divide by 32 or 33

Ratio select low

(note 4, 9)

0

V

Divide by 64 or 65

Max. sinewave input frequency

2100

MHz

See Figure 5

Min. sinewave input frequency

200

MHz

See Figure 5

Min. RF input voltage

50

mV RMS RF input 200MHz to

2100MHz. See Figure 5

Max. RF input voltage

200

mV RMS RF input 200MHz to

2100MHz. See Figure 5

Output level (pin 4)

500

600

mV p-p

(notes 5,6,8)

10

ns

RF input = 1GHz

(notes 6,8)

1

ns

RF input = 1GHz

(notes 7,8)

10

µs

See Figure 9

8

µs

See Figure 9

NOTES

2. All electrical testing is performed at +85°C.

4. Modulus Control and Ratio Select are high impedance inputs which can be driven directly by standard CMOS outputs.

5. Modulus control is latched at the end of the previous cycle.

6. See Figure 4.

7. See Figure 8.

8. These parameters are not tested but are guaranteed by design.

9. The ratio select pin is not intended to be switched dynamically.

Value

Min.

Typ.

Max.

ABSOLUTE MAXIMUM RATINGS

(note 1)

-0.5V to 7V

Control and RF inputs,

RF input current

(note 1)

10mA

Operating temperature

-40°C to +85°C

Storage temperature range

-55°C to +150°C

Maximum junction temperature

+150°C

NOTE 1. Duration <2 minutes.