STP4N150 datasheet(1/16 Pages) STMICROELECTRONICS

Numer części	STP4N150

Szczegółowy opis	N-channel 1500 V - 5 廓 - 4 A - PowerMESH??Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3PF

PDF	16 Pages

Scroll/Zoom	100%

Producent	STMICROELECTRONICS [STMicroelectronics]

Strona internetowa	http://www.st.com

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1 / 16 page

April 2008

Rev 6

1/16

16

STFV4N150 - STFW4N150

STP4N150 - STW4N150

N-channel 1500 V - 5

Ω - 4 A - PowerMESH™ Power MOSFET

TO-220 - TO-220FH - TO-247 - TO-3PF

Features

■ 100% avalanche tested

■ Intrinsic capacitances and Qg minimized

■ High speed switching

■ Fully isolated TO-3PF and TO-220FH plastic

packages

■ Creepage distance path is 5.4 mm (typ.) for

TO-3PF

■ Creepage distance path is > 4 mm for

TO-220FH

Application

■ Switching applications

Description

Using the well consolidated high voltage MESH

OVERLAY™ process, STMicroelectronics has

designed an advanced family of very high voltage

Power MOSFETs with outstanding performances.

The strengthened layout coupled with the

company’s proprietary edge termination structure,

gives the lowest RDS(on) per area, unrivalled gate

charge and switching characteristics.

Figure 1.

Internal schematic diagram.

Type

VDSS

RDS(on) max

ID

STFV4N150

STFW4N150 (1)

STP4N150

STW4N150

1.

All data which refers solely to the TO-3PF package is

preliminary

1500 V

< 7

Ω

< 7

Ω

< 7

Ω

< 7

Ω

4 A

TO-220

TO-247

1

2

3

1

2

3

1

2

3

TO-3PF

1

2

3

TO-220FH

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STFV4N150

4N150

TO-220FH

Tube

STFW4N150

4N150

TO-3PF

Tube

STP4N150

P4N150

TO-220

Tube

STW4N150

W4N150

TO-247

Tube

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STP4N150 Arkusz danych(PDF) 1 Page - STMicroelectronics

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