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AP30G10GD Arkusz danych(PDF) 7 Page - A POWER MICROELECTRONICS |
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AP30G10GD Arkusz danych(HTML) 7 Page - A POWER MICROELECTRONICS |
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7 / 10 page ![]() AP30G10GD 30V N+P-Channel Enhancement Mode MOSFET AP30G10GD REV1.0 永源微電子科技有限公司 Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characteristics Figure 9. Power Dissipation Figure10. Safe Operating Area Figure 11. Normalized Maximum Transient Thermal Impedance |
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