AP32N50LP datasheet(1/7 Pages) APME

Numer części	AP32N50LP

Szczegółowy opis	500V N-Channel Enhancement Mode MOSFET

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Producent	APME [A POWER MICROELECTRONICS]

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AP32N50LP

500V N-Channel Enhancement Mode MOSFET

AP32N50LP REV1.0

永源微電子科技有限公司

Description

The AP32N50LP is silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency.

General Features

VDS=500V ID=32A

RDS(ON) < 180mΩ @ VGS=10V （Type：130mΩ）

Application

Uninterruptible Power Supply(UPS)

Power Factor Correction (PFC)

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP32N50LP

TO-247S-3L

AP32N50LP XXX YYYY

360

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Value

Unit

VDSS

Drain-Source Voltage (VGS = 0V)

500

V

ID@TC=25°C

Continuous Drain Current

32

A

ID@TC=100°C

Continuous Drain Current

22

A

IDM

Pulsed Drain Current

(note1)

120

A

VGS

Gate-Source Voltage

±30

V

EAS

Single Pulse Avalanche Energy (note2)

3391

mJ

IAS

Avalanche Current (note1)

25

A

PD

Power Dissipation (TC = 25ºC)

695

W

TJ, Tstg

Operating Junction and Storage Temperature Range

-55~+150

ºC

RthJA

Thermal Resistance, Junction-to-Ambient

45

ºC/W

RthJC

Thermal Resistance, Junction-to-Case

0.3

ºC/W

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