STB4NK60Zx, STD4NK60Zx, STP4NK60Z, STP4NK60ZFP

Electrical characteristics

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Table 8.

Gate-source Zener diode

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

1.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Source-drain current

Source-drain current (pulsed)

4

16

A

A

(2)

2.

Pulse width limited by safe operating area

Forward on voltage

1.6

V

Reverse recovery time

Reverse recovery charge

Reverse recovery current

(see Figure 19)

400

1700

8.5

ns

nC

A

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

1.

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

Gate-source breakdown voltage Igs=± 1 mA (open drain)

30

V