AP60H03GD datasheet(1/7 Pages) APME

Numer części	AP60H03GD

Szczegółowy opis	30V NN-Channel Enhancement Mode MOSFET

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Producent	APME [A POWER MICROELECTRONICS]

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AP60H03GD

30V N+N-Channel Enhancement Mode MOSFET

AP60H03GD RVE1.0

永源微電子科技有限公司

Description

The AP60H03GD uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 30V ID =60A

RDS(ON) < 7.5mΩ @ VGS=10V （Type：6.0mΩ）

Application

VBUS

Wireless impact

Mobile phone fast charging

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP60N03D

TO-252-4L

AP60N03D XXX YYYY

2500

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Continuous Drain Current, VGS @ 10V1

60

A

ID@TC=100

℃

Continuous Drain Current, VGS @ 10V1

40

A

IDM

Pulsed Drain Current2

92

A

EAS

Single Pulse Avalanche Energy3

157.8

mJ

IAS

Avalanche Current

34

A

PD@TC=25

℃

Total Power Dissipation4

29

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-ambient 1

62.5

℃/W

RθJC

Thermal Resistance Junction-Case1

4.32

℃/W

Podobny numer części - AP60H03GD

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A POWER MICROELECTRONIC...	AP60H03DF	772Kb / 7P	30V NN-Channel Enhancement Mode MOSFET REV1.0

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AP60H03GD Arkusz danych(PDF) 1 Page - A POWER MICROELECTRONICS

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