AP100P02NF datasheet(1/7 Pages) APME

Numer części	AP100P02NF

Szczegółowy opis	-20V P-Channel Enhancement Mode MOSFET

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Producent	APME [A POWER MICROELECTRONICS]

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AP100P02NF

-20V P-Channel Enhancement Mode MOSFET

AP100P02NF REV1.0

永源微電子科技有限公司

Description

The AP100P02NF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -20V ID =-100 A

RDS(ON) < -2.7mΩ @ VGS=-4.5V (Type：2.1mΩ)

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP100P02NF

PDFN5*6-8L

AP100P02NF XXX YYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-20

V

VGS

Gate-Source Voltage

±12

V

ID@TC=25℃

Continuous Drain Current, VGS @ -10V1

-100

A

ID@TC=100℃

Continuous Drain Current, VGS @ -10V1

-66

A

IDM

Pulsed Drain Current2

-340

A

EAS

Single Pulse Avalanche Energy3

400

mJ

IAS

Avalanche Current

-50

A

PD@TC=25℃

Total Power Dissipation4

52.1

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

25

℃

/W

RθJC

Thermal Resistance Junction-Case1

1.8

℃

/W

Podobny numer części - AP100P02NF

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AP100P02NF Arkusz danych(PDF) 1 Page - A POWER MICROELECTRONICS

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