TCS12J datasheet(1/2 Pages) ISC

Numer części	TCS12J

Szczegółowy opis	isc Silicon PNP Power Transistor

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Producent	ISC [Inchange Semiconductor Company Limited]

Strona internetowa	http://www.iscsemi.cn

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isc Silicon PNP Power Transistor

TCS12J

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-BVCEO= -200V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat):-1V(Max) @IC=-1A

APPLICATIONS

·

Switching

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-200

V

VCEO

Collector-Emitter Voltage

-200

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-3

A

PC

Collector Power Dissipation

50

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

2.5

℃

/W

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